公开(公告)号：US11770925B2

公开(公告)日：2023-09-26

申请号：US17339130

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. Kim ,  Ho-In Ryu ,  Seong Min Park

IPC: H10B12/00 ,  H01L21/768 ,  H01L23/532

CPC classification number: H10B12/315 ,  H01L21/7682 ,  H01L23/5329 ,  H10B12/34 ,  H10B12/482 ,  H01L23/53295 ,  H10B12/485

Abstract: A semiconductor device includes a semiconductor substrate including a trench, a direct contact in the trench, the direct contact having a width smaller than a width of the trench, a bit line structure on the direct contact, the bit line structure having a width smaller than the width of the trench, a first spacer including a first portion and a second portion, the first portion extending along an entire side surface of the direct contact, and the second portion extending along the trench, a second spacer on the first spacer, the second spacer filling the trench, a third spacer on the second spacer, and an air spacer on the third spacer, the air spacer being spaced apart from the second spacer by the third spacer, wherein the first spacer includes silicon oxide.

公开(公告)号：US11728410B2

公开(公告)日：2023-08-15

申请号：US17339144

申请日：2021-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin A. Kim ,  Ho-In Ryu ,  Jae Won Na

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L29/0642 ,  H01L29/4236

Abstract: A semiconductor device includes a substrate having a trench, a conductive pattern in the trench, a spacer structure on a side surface of the conductive pattern, and a buried contact including a first portion apart from the conductive pattern by the spacer structure and filling a contact recess, and a second portion on the first portion having a pillar shape with a width smaller than that of a top surface of the first portion. The spacer structure includes a first spacer extending along the second portion of the buried contact on the first portion of the buried contact and contacting the buried contact, a second spacer extending along the first spacer, and a third spacer extending along the side surface of the conductive pattern and the trench and apart from the first spacer by the second spacer, the first spacer includes silicon oxide, and the second spacer includes silicon nitride.