公开(公告)号：US10358578B2

公开(公告)日：2019-07-23

申请号：US14919116

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Youngjun Yun ,  Jeong II Park ,  Ajeong Choi

IPC: H01L29/08 ,  C09D183/06 ,  H01L51/05 ,  H01L51/00 ,  C09D11/101 ,  C09D11/102

Abstract: An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

公开(公告)号：US20190035868A1

公开(公告)日：2019-01-31

申请号：US15826011

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Suk Gyu Hahm ,  Jeong II Park ,  Yong Uk Lee ,  Jong Won Chung

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3283 ,  H01L51/05 ,  G09G3/36

Abstract: Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

公开(公告)号：US20180179227A1

公开(公告)日：2018-06-28

申请号：US15904677

申请日：2018-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Don-Wook LEE ,  Jeong II Park ,  Eigo Miyazaki

IPC: C07D517/22 ,  H01L51/00 ,  C07D495/04 ,  H01L51/05

CPC classification number: C07D517/22 ,  C07D495/04 ,  H01L51/0071 ,  H01L51/0558

Abstract: A synthetic method of a fused heteroaromatic compound includes preparing a first intermediate represented by Chemical Formula 1, obtaining a second intermediate by reacting the first intermediate and an aldehyde compound, obtain a third intermediate by performing deprotection and reduction reactions on the second intermediate, and obtaining a fused heteroaromatic compound by performing a cyclization reaction on the third intermediate.

公开(公告)号：US20200165268A1

公开(公告)日：2020-05-28

申请号：US16693715

申请日：2019-11-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Don-Wook Lee ,  Jeong II Park ,  Eun Kyung Lee

IPC: C07D517/04 ,  H01L51/05 ,  C07D517/22 ,  C07D495/04 ,  H01L51/00

Abstract: Disclosed are a compound represented by Chemical Formula 1A or 1B, an organic thin film, a thin film transistor, and an electronic device. In Chemical Formulae 1A and 1B, X1, Ar13 , R1 to R4, and n1 are the same as described in the detailed description.

公开(公告)号：US20170149002A1

公开(公告)日：2017-05-25

申请号：US15267242

申请日：2016-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyoung Jung ,  Joo Young Kim ,  Jeong II Park

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0002 ,  H01L51/0012 ,  H01L51/0533

Abstract: A method of manufacturing an organic thin film transistor includes forming a gate electrode and a gate insulator on a substrate, forming a self-assembled layer from self-assembled layer precursor on the gate insulator and forming an organic semiconductor on the self-assembled layer, a friction force is applied to the surface of the self-assembled layer in at least two directions between forming the self-assembled layer and forming the organic semiconductor, and an organic thin film transistor manufactured by the method, and a display device including the same are provided. A device of treating a surface of a thin film used for the method is provided.

公开(公告)号：US20190319166A1

公开(公告)日：2019-10-17

申请号：US16108296

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Jiyoung Jung ,  Jeong II Park

IPC: H01L33/06 ,  H01L33/58 ,  H01L33/50 ,  H01L33/36

Abstract: A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiO3/2 moiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

公开(公告)号：US20180198078A1

公开(公告)日：2018-07-12

申请号：US15915414

申请日：2018-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung LEE ,  Jeong II Park

IPC: H01L51/00 ,  C07D333/50 ,  H01L51/05

CPC classification number: H01L51/0074 ,  C07D333/50 ,  H01L51/0558 ,  Y02E10/549

Abstract: An organic compound is represented by Chemical Formula 1, and an organic thin film, an organic thin film transistor, and an electronic device include the organic compound.