公开(公告)号：US20240421082A1

公开(公告)日：2024-12-19

申请号：US18662042

申请日：2024-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeon Won Jeong ,  Yubo Qian ,  Sutae Kim ,  Jae Young Park ,  Jin Woo Lee

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a substrate including a standard cell area and an ending cell area that at least partially surrounds the standard cell area; a first active pattern in the standard cell area; a first wiring that extends in a first direction and is on the first active pattern; a first gate electrode that extends in a second direction and is on the first active pattern; a first gate contact; a second active pattern in the ending cell area; a second wiring that extends in the first direction and is on the second active pattern; a second gate electrode that extends in the second direction and is on the second active pattern; and a second gate contact.