公开(公告)号：US20250151293A1

公开(公告)日：2025-05-08

申请号：US18738574

申请日：2024-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeehyun JUNG ,  Hansung RYU ,  Jongbeom PARK

IPC: H10B80/00 ,  H01L23/00 ,  H01L25/065

Abstract: A high bandwidth memory includes a base die and a memory stack on the base die. The memory stack includes a plurality of memory dies. The memory stack includes a first memory die closest to the base die among the plurality of memory dies and having a first width in a horizontal direction, and a second memory die on the first memory die and having a second width in the horizontal direction, the first width is smaller than the second width.