公开(公告)号：US20240321938A1

公开(公告)日：2024-09-26

申请号：US18591310

申请日：2024-02-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheoljin Cho ,  Yukyung Shin ,  Jieun Lee ,  Hanjin Lim ,  Changhwa Jung ,  Jayun Choi

IPC: H10B12/00

CPC classification number: H01L28/55 ,  H10B12/482 ,  H10B12/488

Abstract: A semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. The dielectric layer is disposed between the upper electrode and the lower electrode. A thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.

公开(公告)号：US20240224503A1

公开(公告)日：2024-07-04

申请号：US18542627

申请日：2023-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheoljin Cho ,  Yukyung Shin ,  Changhwa Jung ,  Jieun Lee ,  Jayun Choi

IPC: H10B12/00

CPC classification number: H10B12/315

Abstract: A semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. The multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline TiO2 or crystalline SrTiO3, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.