公开(公告)号：US10566284B2

公开(公告)日：2020-02-18

申请号：US16027484

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Kwan Kim ,  Sanghoon Ahn ,  Kyu-Hee Han ,  JaeWha Park ,  Heesook Park

IPC: H01L23/532 ,  H01L23/522

Abstract: Provided is a semiconductor device comprising a device region on a substrate, an interlayer dielectric layer on the device region, a first interface layer on a side of the interlayer dielectric layer, a low-k dielectric layer spaced apart from the interlayer dielectric layer across the first interface layer and having a dielectric constant less than that of the interlayer dielectric layer, and a conductive line in the low-k dielectric layer. The first interface layer comprises a first sub-interface layer in contact with the low-k dielectric layer, and a second sub-interface layer in contact with the interlayer dielectric layer. The second sub-interface layer has hydrogen permeability less than that of the first sub-interface layer.