Abstract:
An apparatus for generating an image may include a plurality of scintillator layers configured to convert an incident beam into an optical signal; a plurality of micro cells configured to turn on or off depending on whether or not the micro cells detect the optical signal; a reaction depth determining unit configured to detect a decay pattern of the optical signal, on the basis of on/off signals of the micro cells, and configured to determine a type of the scintillator layers with which the incident beam has reacted; and/or a reading unit configured to decide an occurrence location of the incident beam and then generates a photographed image.
Abstract:
A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter.
Abstract:
Provided are photon counting apparatuses and methods, and radiographic imaging apparatuses configured to receive charge signals corresponding to incident radiation photons, and to count the incident radiation photons by using a plurality of counting bits, such that the counting changes only one counting bit from among the plurality of counting bits when the count value is increased by one. By using the photon counting methods, a data-change frequency of photon counting data corresponding to radiation photons is minimized while counting the radiation photons based on charge signals corresponding to input radiation photons.
Abstract:
According to example embodiments, a photomultiplier detector cell for tomography includes a detector unit and a readOUT unit. The detector unit is configured to generate a digitized detect signal in response to receives light having a certain range of wavelength. The readOUT unit is configured to generate an output signal corresponding to the detect signal generated by the detector unit and to transmit the output signal to an external circuit. The readOUT unit is configured to transmit the output signal to the external circuit right after the detect signal is received.
Abstract:
A photon counting detection (PCD) apparatus and radiographic imaging apparatus including the PCD apparatus are provided. The PCD apparatus includes a negative-feedback resistor instead of a negative-feedback capacitor in a signal amplifying apparatus thereof to minimize a leakage current, circuit noise, and a photoelectric accumulation effect at a high speed, so that an improved image may be obtained.
Abstract:
A voltage reset method may include: acquiring a voltage that is changed with time by using an input photon; determining a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or resetting the acquired voltage on a basis of the determined voltage reset timing. A voltage reset apparatus may include: an acquisition unit configured to acquire a voltage that is changed with time by using an input photon; a determination unit configured to determine a timing for resetting the acquired voltage by using time information in a period where the acquired voltage increases; and/or a reset unit configured to reset the acquired voltage on a basis of the determined voltage reset timing.
Abstract:
A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.
Abstract:
Disclosed is a voltage obtaining apparatus. The voltage obtaining apparatus includes a plurality of conversion units, which are connected to each other in parallel and respectively convert charge packets into voltages, and a control unit that controls a timing when the charge packets are respectively input to the plurality of conversion units. The control unit is configured to control the timing so that a corresponding charge packet is input to an nth conversion unit (where n denotes number of the conversion units) at a timing when an operation of an (n−1)th conversion unit is ended.
Abstract:
Disclosed are a charge sensitive amplifier, a detector and an X-ray photographing apparatus including the same. The charge sensitive amplifier includes an amplification unit that amplifies an electric charge input thereto, a capacitor that has one end of the capacitor, connected to an input terminal of the amplification unit, and the other end connected to an output terminal of the amplification unit, and a buffer unit that has an input terminal and an output terminal which is connected to the input terminal of the amplification unit and the one end of the capacitor. Impedance at the input terminal of the buffer unit is lower than impedance at the output terminal of the buffer unit.
Abstract:
A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer.