公开(公告)号：US20170092480A1

公开(公告)日：2017-03-30

申请号：US15000001

申请日：2016-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Sun YI ,  Ki-Chul KIM ,  Jong-Cheol LEE ,  Kyu-Hee HAN ,  Jae-Chul SHIN ,  Min-Hwa JUNG ,  Yu-Ho Won ,  Seung-Han LEE ,  Jin-Pil HEO

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/0262 ,  C23C16/4412 ,  C23C16/45551 ,  C23C16/45574 ,  C23C16/4584

Abstract: Provided are gas injection apparatuses, thin-film deposition equipment, and methods for manufacturing a semiconductor device. The gas injection apparatus includes: a base plate; a first gas separation region on the base plate; first and second source gas supplying regions disposed on the base plate to either side of the first gas separation region, respectively, and configured to supply a source gas; and a first reaction gas supplying region disposed at a position on the base plate other than between the first gas separation region and the first source gas supplying region and between the first gas separation region and the second source gas supplying region, and configured to supply a reaction gas, wherein the first source gas supplying region and the second source gas supplying region protrude from the base plate, wherein each of the first source gas supplying region and the second source gas supplying region has a fan-shaped upper face, and wherein the first gas separation region is defined by a side wall of the first source gas supplying region and a side wall of the second source gas supplying region, the side walls facing each other and extending in radial directions.