公开(公告)号：US10114555B2

公开(公告)日：2018-10-30

申请号：US15263730

申请日：2016-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sil Wan Chang ,  Byung Gook Kim ,  Jae Young Kwon ,  Jong Youl Lee

IPC: G11C8/00 ,  G06F3/06

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.