公开(公告)号：US20190229242A1

公开(公告)日：2019-07-25

申请号：US16045951

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42 ,  H01L33/12 ,  H01L33/20

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

公开(公告)号：US20200243721A1

公开(公告)日：2020-07-30

申请号：US16845438

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/12 ,  H01L33/20 ,  H01L33/42 ,  H01L33/38

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

公开(公告)号：US20190237626A1

公开(公告)日：2019-08-01

申请号：US16055651

申请日：2018-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Tae Hun KIM ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46 ,  H01L33/52

Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.

公开(公告)号：US20180198025A1

公开(公告)日：2018-07-12

申请号：US15671275

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In SIM ,  Ju Heon YOON ,  Gi Bum KIM ,  Ji Hye LEE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L33/007 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/05001 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

公开(公告)号：US20190273185A1

公开(公告)日：2019-09-05

申请号：US16202793

申请日：2018-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US20150279707A1

公开(公告)日：2015-10-01

申请号：US14522937

申请日：2014-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In SIM ,  Gyeong Seon PARK ,  Kyung Ja LIM ,  Seung Woo CHOI ,  O Hak KWON

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/6838 ,  B32B43/006 ,  H01L21/67092 ,  H01L21/68735 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1132 ,  Y10T156/1153 ,  Y10T156/1168 ,  Y10T156/1911 ,  Y10T156/1944 ,  Y10T156/1978

Abstract: There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

Abstract translation: 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。