公开(公告)号：US20180330987A1

公开(公告)日：2018-11-15

申请号：US16046081

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOO KYUNG YOU ,  JONG MIN BAEK ,  SANG SHIN JANG ,  BYUNG HEE KIM ,  VIETHA NGUYEN ,  NAE IN LEE ,  WOO JIN LEE ,  EUN JI JUNG ,  KYU HEE HAN

IPC: H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76883 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/528

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.

公开(公告)号：US20180033691A1

公开(公告)日：2018-02-01

申请号：US15393506

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Kyung You ,  JONG MIN BAEK ,  SANG SHIN JANG ,  BYUNG HEE KIM ,  VIETHA NGUYEN ,  NAE IN LEE ,  WOO JIN LEE ,  EUN JI JUNG ,  KYU HEE HAN

IPC: H01L21/768 ,  H01L23/528

CPC classification number: H01L21/76883 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L23/528

Abstract: A semiconductor device includes a first insulating interlayer on a substrate, metal lines in the first insulating interlayer, a first air gap between the metal lines in a first region of the substrate and a second air gap between the first insulating interlayer and at least one of the metal lines in a second region of the substrate, a liner layer covering top surfaces and side walls of the metal lines and a top surface and a side wall of the first insulating interlayer, adjacent to the first and second air gaps, and a second insulating interlayer on the liner layer and contacting the liner layer.