公开(公告)号：US20210043722A1

公开(公告)日：2021-02-11

申请号：US16860136

申请日：2020-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAE-HWAN CHO ,  SANGHO LEE ,  YOOSANG HWANG

IPC: H01L49/02

Abstract: Disclosed are semiconductor devices including support patterns and methods of fabricating the same. The semiconductor devices may include a plurality of vertical structures on a substrate and a support pattern that contacts sidewalls of the plurality of vertical structures. The support pattern may include a plurality of support holes extending through the support pattern. The plurality of support holes may include a first support hole and a second support hole that are spaced apart from each other, and the first support hole may have a shape or size different from a shape or size of the second support hole.