公开(公告)号：US20220262731A1

公开(公告)日：2022-08-18

申请号：US17487460

申请日：2021-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangoh Park ,  Hyunseo Shin ,  Seokhan Park ,  Seunghune Yang

IPC: H01L23/528 ,  H01L27/108

Abstract: A semiconductor device may include a gate structure, first and second source/drain layers, first and second contact plugs, first and second conductive structures, and a third contact plug. The gate structure may be on a substrate. The first and second source/drain layers may be at upper portions, respectively, of the substrate on opposite sidewalls of the gate structure and adjacent thereto. The first and second contact plugs may be on the first and second source/drain layers, respectively, and each contact plugs may extend in a vertical direction. The first and second conductive structures may contact upper surfaces of the first and second contact plugs, respectively. The third contact plug may contact an upper surface of the second conductive structure. A height and a width of the second conductive structure may be greater than a height and a width of the first conductive structure.

公开(公告)号：US20230345696A1

公开(公告)日：2023-10-26

申请号：US18132198

申请日：2023-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seokhan Park ,  Bowon Yoo ,  Hyunseo Shin ,  Kiseok Lee ,  Moonyoung Jeong

IPC: H10B12/00

CPC classification number: H10B12/0387 ,  H10B12/0383 ,  H10B12/488

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of first trenches in a substrate. A plurality of first filling layers is formed that fills the first trenches and have protrusions extending to protrude from the substrate. Spacers are formed on sidewalls of the protrusions of the first filling layers. The spacers expose portions of the substrate between adjacent first filling layers. A plurality of second trenches is formed around the first trenches by etching the portions of the substrate exposed by the spacers. A plurality of second filling layers is formed that fills the second trenches. All of the first filling layers and the spacers are removed. A gate material layer is formed that conformally covers inner walls of the first trenches. A pair of gate structures is formed in each of the first trenches by separating the gate material layer.