公开(公告)号：US20210175226A1

公开(公告)日：2021-06-10

申请号：US16986533

申请日：2020-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjun Song ,  Hyunkwang Jeong ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L27/02

Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.

公开(公告)号：US11817447B2

公开(公告)日：2023-11-14

申请号：US16986533

申请日：2020-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungjun Song ,  Hyunkwang Jeong ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L27/02

CPC classification number: H01L27/0277 ,  H01L27/0274 ,  H01L27/0285

Abstract: A semiconductor device includes a substrate including a P-well region, a gate electrode on the substrate, and a first region and a second region formed in the substrate on opposite sides adjacent to the gate electrode, the first region includes a first N-well region in the substrate and a second N-well region, a first impurity region, a second impurity region in the first N-well region, the second region includes a third impurity region in the substrate and a fourth impurity region in the third impurity region, a doping concentration of the second N-well region is greater than a doping concentration of the first N-well region, and a doping concentration of the second impurity region is greater than a doping concentration of the second N-well region.