Abstract:
A design rule generating method is provided. The method includes receiving a test pattern, providing a plurality of workflows, which correspond to the test pattern and are preset in relation to a lithography model and a mask generation method, and performing simulation on the test pattern according to a workflow selected from the workflows.
Abstract:
A design rule generating method is provided. The method includes receiving a test pattern, providing a plurality of workflows, which correspond to the test pattern and are preset in relation to a lithography model and a mask generation method, and performing simulation on the test pattern according to a workflow selected from the workflows.
Abstract:
A semiconductor device includes a substrate on which a plurality of logic cells are provided, and a plurality of active portions provided on the substrate and extending in a first direction. Contacts and gate structures extend in a second direction intersecting the first direction and are alternately arranged. A common conductive line extends along a boundary region of the plurality of logic cells in the first direction. At least one of the contacts is electrically connected to the common conductive line through a via therebetween, and each of the contacts intersects a plurality of the active portions. End portions of the contacts are aligned with each other along the first direction.
Abstract:
A method of forming a pattern includes defining a plurality of patterns, defining a plurality of pitch violating patterns that contact the plurality of patterns and correspond to regions between the patterns, classifying the plurality of pitch violating patterns into a first region and a second region that is adjacent to the first region, selecting one of the first region and the second region, and forming an initial pattern defined as the selected first or second region. The selecting includes performing at least one of i) selecting a region that contact dummy patterns, ii) selecting a region of a same kind as one region, and iii) selecting a region that contacts a concave part of an enclosure from the first region and the second region.