公开(公告)号：US20240206149A1

公开(公告)日：2024-06-20

申请号：US18541791

申请日：2023-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun Lee ,  Hyoseok Kim ,  Yongseok Kim

IPC: H10B12/00

CPC classification number: H10B12/20

Abstract: A semiconductor device includes a source line extending in a first horizontal direction on a substrate, a channel layer extending in a vertical direction perpendicular to an upper surface of the substrate, and including a first end, a second end opposite to the first end, and a channel layer sidewall connecting the first end with the second end, the first end being disposed on the source line, a trap layer disposed on the channel layer sidewall, a gate insulating layer disposed on an outer surface of the trap layer, a word line disposed on at least one sidewall of the gate insulating layer and extending in a second horizontal direction crossing the first horizontal direction, a drain area disposed on the second end of the channel layer and including a metal or metal nitride, and a bit line disposed on the drain area and extending in the first horizontal direction.