公开(公告)号：US20190043804A1

公开(公告)日：2019-02-07

申请号：US15894968

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yubo Qian ,  Byung Sung Kim ,  Hyeon Uk Kim ,  Young Gook Park ,  Chul Hong Park

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.

公开(公告)号：US20190148292A1

公开(公告)日：2019-05-16

申请号：US16244137

申请日：2019-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yubo Qian ,  Byung Sung Kim ,  Hyeon Uk Kim ,  Young Gook Park ,  Chul Hong Park

IPC: H01L23/522 ,  H01L23/528 ,  H01L21/768

Abstract: A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.

公开(公告)号：US10217705B1

公开(公告)日：2019-02-26

申请号：US15894968

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yubo Qian ,  Byung Sung Kim ,  Hyeon Uk Kim ,  Young Gook Park ,  Chul Hong Park

IPC: H01L23/00 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.