公开(公告)号：US20250157852A1

公开(公告)日：2025-05-15

申请号：US19024215

申请日：2025-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul LEE ,  Ki-Jeong KIM ,  Hwan LIM ,  Hyun-Sil HONG

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/311 ,  H10B12/00 ,  H10D64/27

Abstract: A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.

公开(公告)号：US20230013061A1

公开(公告)日：2023-01-19

申请号：US17668452

申请日：2022-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunchul LEE ,  Ki-Jeong KIM ,  Hwan LIM ,  Hyun-Sil HONG

IPC: H01L21/762 ,  H01L29/423 ,  H01L21/02 ,  H01L27/108

Abstract: A semiconductor device includes a substrate having one or more inner surfaces defining trenches that define an active pattern of the substrate, the trenches including a first trench and a second trench which have different widths, a device isolation layer on the substrate such that the device isolation layer at least partially fills the trenches, and a word line intersecting the active pattern. The device isolation layer includes a first isolation pattern covering a portion of the second trench, a second isolation pattern on the first isolation pattern and covering a remaining portion of the second trench, and a filling pattern filling the first trench under the word line. A top surface of the second isolation pattern is located at a higher level than a top surface of the filling pattern.