公开(公告)号：US20230070835A1

公开(公告)日：2023-03-09

申请号：US17724901

申请日：2022-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongjun Lee ,  Kang-Uk Kim ,  Hoouk Lee

IPC: H01L27/108

Abstract: A semiconductor device may include a substrate including a cell region and a peripheral region, bit lines on the cell region and extending in a first direction parallel to a top surface of the substrate, a lower capping pattern on a top surface of each of the bit lines, a bit line spacer on a side surface of each of the bit lines and extending to a side surface of the lower capping pattern, and a respective upper capping pattern on a top surface of the lower capping pattern. The respective upper capping pattern is on at least a portion of a top surface of the bit line spacer.