公开(公告)号：US20180145080A1

公开(公告)日：2018-05-24

申请号：US15644877

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan KIM ,  Ji Hun KIM ,  Jae Joon SONG ,  Hiroshi TAKEDA ,  Jung Hoon HAN

IPC: H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06 ,  H01L23/528 ,  H01L21/28

CPC classification number: H01L27/10823 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/28088 ,  H01L21/7682 ,  H01L23/528 ,  H01L27/10814 ,  H01L27/10876 ,  H01L29/0649 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/4991 ,  H01L29/66621

Abstract: A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.

公开(公告)号：US20180122810A1

公开(公告)日：2018-05-03

申请号：US15621315

申请日：2017-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Hoon HAN ,  Dong Wan KIM ,  Ji Hun KIM ,  Jae Joon SONG ,  Hiroshi TAKEDA

IPC: H01L27/108 ,  H01L49/02

CPC classification number: H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/60 ,  H01L28/90

Abstract: A semiconductor device is provided. The semiconductor device includes an upper interlayer insulating layer disposed on a substrate. A first electrode spaced apart from the upper interlayer insulating layer is disposed on the substrate. A contact structure penetrating the upper interlayer insulating layer is disposed on the substrate. An upper support layer having a first portion covering an upper surface of the upper interlayer insulating layer, to surround an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and surrounding an upper side surface of the first electrode, is disposed. A dielectric conformally covering the first electrode and a second electrode on the dielectric are disposed.