公开(公告)号：US08847199B2

公开(公告)日：2014-09-30

申请号：US13672019

申请日：2012-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Go Cha ,  Geon-Wook Yoo ,  Han-Kyu Seong ,  Sam-Mook Kang ,  Hun-Jae Chung

IPC: H01L33/00 ,  B82Y20/00 ,  H01L33/24 ,  H01L33/38 ,  B82Y40/00 ,  H01L33/08 ,  H01L33/18

CPC classification number: H01L33/24 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/387 ,  Y10S977/932

Abstract: A nanorod light emitting device includes at least one nitride semiconductor layer, a mask layer, multiple light emitting nanorods, nanoclusters, a filling layer disposed on the nanoclusters, a first electrode and connection parts. The mask layer is disposed on the nitride semiconductor layer and has through holes. The light emitting nanorods are disposed in and extend vertically from the through holes. The nanoclusters are spaced apart from each other. Each of the nanoclusters has a conductor and covers a group of light emitting nanorods, among the multiple light emitting nanorods, with the conductor. The first electrode is disposed on the filling layer and has a grid pattern. The connection parts connect the conductor and the first electrode.

Abstract translation: 纳米棒发光器件包括至少一个氮化物半导体层，掩模层，多个发光纳米棒，纳米团簇，设置在纳米团簇上的填充层，第一电极和连接部分。 掩模层设置在氮化物半导体层上并具有通孔。 发光纳米棒设置在通孔中并从通孔垂直延伸。 纳米团簇彼此间隔开。 每个纳米团簇具有导体并且覆盖在多个发光纳米棒中的一组发光纳米棒与导体。 第一电极设置在填充层上并具有网格图案。 连接部分连接导体和第一电极。

公开(公告)号：US08853671B2

公开(公告)日：2014-10-07

申请号：US13657357

申请日：2012-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Goo Cha ,  Geon-Wook Yoo ,  Han-Kyu Seong ,  Sam-Mook Kang ,  Hun-Jae Chung

IPC: H01L29/06 ,  H01L33/00 ,  H01L33/38 ,  H01L33/18 ,  H01L33/08 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/18 ,  H01L33/007 ,  H01L33/08 ,  H01L33/24 ,  H01L33/385 ,  H01L33/44

Abstract: A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods.

Abstract translation: 纳米棒发光器件及其制造方法。 纳米棒发光器件可以包括至少一个氮化物半导体层，形成在氮化物半导体层上并彼此间隔开的发光纳米棒，以及第一填充层，导电层和形成在第二填充层之间的第二填充层 发光纳米棒。

公开(公告)号：US09525102B2

公开(公告)日：2016-12-20

申请号：US14764349

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo Cha ,  Geon-Wook Yoo ,  Han-Kyu Seong

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/00 ,  H01L33/20 ,  H01L33/18

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.

Abstract translation: 提供一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基底层，在基底层上形成包括蚀刻停止层的掩模，形成多个具有基底区域的开口 在面罩中暴露于其中的层; 通过在基底层的暴露区域上生长第一导电类型半导体以填充多个开口而形成多个纳米孔，使用蚀刻停止层部分地去除掩模以暴露多个纳米孔的侧部，并依次 在多个纳米孔的表面上生长活性层和第二导电型半导体层。