公开(公告)号：US20250126871A1

公开(公告)日：2025-04-17

申请号：US18630286

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon PARK ,  Minseok JO ,  Jinyoung CHOI ,  Jun-Youp LEE ,  Hakjong LEE

IPC: H01L29/423 ,  H01L21/762 ,  H01L23/522 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device may include an active pattern on a substrate, defined by a trench, and extending in a first direction, a device isolation layer filling the trench, the substrate including a first surface in contact with a bottom surface of the device isolation layer and a second surface opposite to the first surface, a gate electrode extending in a second direction and cross the active pattern, the second direction crossing the first direction, a first division structure spaced apart from the gate electrode in the first and extending in the second direction, and a power delivery network layer on the second surface of the substrate. The first division structure may penetrate the device isolation layer, and a bottom surface of the first division structure may be coplanar with the second surface of the substrate.