公开(公告)号：US11211447B2

公开(公告)日：2021-12-28

申请号：US16282548

申请日：2019-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyukwoo Kwon ,  Ha-Young Yi ,  Byoungdeog Choi ,  Seongmin Choo

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/311

Abstract: A semiconductor device includes a substrate, a bottom electrode on the substrate, a first support layer on the substrate next to a sidewall of the bottom electrode, a dielectric layer covering the sidewall and a top surface of the bottom electrode, and a top electrode on the dielectric layer. The bottom electrode includes a first part having a plurality of protrusions that protrude from a sidewall of the first part. The first part of the bottom electrode may be on the first support layer.