公开(公告)号：US20220352178A1

公开(公告)日：2022-11-03

申请号：US17547306

申请日：2021-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNJUNG KIM ,  HYEWON KIM ,  SEI-RYUNG CHOI

IPC: H01L27/108 ,  H01L21/762

Abstract: A semiconductor device includes a substrate including a cell region, a peripheral region, and a boundary region between the cell region and the peripheral region, cell active patterns on the cell region of the substrate, peripheral active patterns on the peripheral region of the substrate, a boundary insulating pattern disposed on the boundary region of the substrate and disposed between the cell active patterns and the peripheral active patterns, and a bumper pattern disposed on the cell region of the substrate and disposed between the boundary insulating pattern and the cell active patterns. A width of the bumper pattern in a first direction parallel to a top surface of the substrate is greater than a width of each of the cell active patterns in the first direction.