公开(公告)号：US20240274633A1

公开(公告)日：2024-08-15

申请号：US18460753

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHYUN KWAK ,  HONGKI KIM ,  HYO EUN KIM ,  SANG-HOON SONG ,  SEUNGJAE OH ,  SURIM LEE ,  TAEYON LEE

IPC: H01L27/146

CPC classification number: H01L27/14627 ,  H01L27/14685 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636

Abstract: Disclosed is an image sensor which includes a substrate including an active region that includes a plurality of photoelectric conversion pixels and a peripheral region that extends around the active region, a transparent window on the substrate, a wall structure that is on the peripheral region along a periphery of the substrate and seals a space between the substrate and the transparent window, a planarization insulting layer on the active region and a portion of the peripheral region of the substrate, and a plurality of lens patterns on the planarization insulating layer. The planarization insulting layer includes first to third lens regions, and the lens patterns have different shapes and/or are arranged at different intervals on the first to third lens regions.

公开(公告)号：US20250160021A1

公开(公告)日：2025-05-15

申请号：US19019766

申请日：2025-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

公开(公告)号：US20220165774A1

公开(公告)日：2022-05-26

申请号：US17511754

申请日：2021-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H01L27/146

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

公开(公告)号：US20250160020A1

公开(公告)日：2025-05-15

申请号：US19019718

申请日：2025-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HONGKI KIM ,  CHANGROK MOON ,  TAEHYONG KIM ,  SEUNGJAE OH ,  JIHYUN KWAK

IPC: H10F39/00 ,  H10F39/18

Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.