公开(公告)号：US20230165012A1

公开(公告)日：2023-05-25

申请号：US18049366

申请日：2022-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gabjin Nam ,  Bongjin Kuh ,  Musarrat Hasan ,  Geonju Park ,  Yongho Ha

IPC: H01L27/1159

CPC classification number: H01L27/1159

Abstract: A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric layer. The high dielectric layer and the ferroelectric layer have phases of different crystal structures.