公开(公告)号：US20230328968A1

公开(公告)日：2023-10-12

申请号：US18116537

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunbin Seon ,  Jonghyun Kim ,  Hyunjung Lee ,  Dohyung Kim

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/482

Abstract: A semiconductor device includes a metal silicide layer on a substrate, and a contact plug structure on the metal silicide layer. The contact plug structure includes a metal pattern including a first metal, and a first barrier pattern covering a lower surface and a sidewall of the metal pattern and contacting the metal silicide layer. The first barrier pattern includes a second metal. The metal silicide layer includes silicon, the second metal, and a third metal different from the second metal.