公开(公告)号：US20210020692A1

公开(公告)日：2021-01-21

申请号：US16798615

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Eun Ji LEE ,  Ji Yean KIM ,  Tae Seong KIM ,  Jae Wook JOO

IPC: H01L27/22 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.

公开(公告)号：US20230051494A1

公开(公告)日：2023-02-16

申请号：US17975242

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung KIM ,  Eun Ji LEE ,  Ji Yean KIM ,  Tae Seong KIM ,  Jae Wook JOO

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.