公开(公告)号：US20240371831A1

公开(公告)日：2024-11-07

申请号：US18488152

申请日：2023-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonho Jun ,  Duk Sung Kim ,  Gyesik Oh ,  Minwoo Lee ,  Wangyong Im ,  Byoungkon Jo

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538 ,  H10B80/00

Abstract: A semiconductor apparatus includes a semiconductor layer having a first surface and a second surface that is opposite to the first surface; a first wire structure on the first surface of the semiconductor layer; a second wire structure on the second surface of the semiconductor layer; a through via that extends through the semiconductor layer and is electrically connected to the first wire structure and the second wire structure; a first semiconductor element layer that is adjacent to the first surface of the semiconductor layer and in the semiconductor layer; and a second semiconductor element layer that is adjacent to the second surface of the semiconductor layer and in the semiconductor layer.