公开(公告)号：US20250142945A1

公开(公告)日：2025-05-01

申请号：US18634355

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sora YOU ,  Dongyun LEE ,  Seungmin CHA ,  Jeewoong KIM

IPC: H01L27/06 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/861

Abstract: A semiconductor device may include a diode pattern including a first conductive region and a second conductive region having opposite conductivity types to each other on a base insulating layer, an insulating layer covering the diode pattern on the base insulating layer, a wiring portion on the insulating layer; and a through connector extending through the insulating layer at a periphery of the diode pattern to electrically connect the diode pattern and the wiring portion.