FLOW CONTROL METHOD USING PLASMA SYSTEM
    1.
    发明公开

    公开(公告)号:US20240026539A1

    公开(公告)日:2024-01-25

    申请号:US18197919

    申请日:2023-05-16

    CPC classification number: C23C16/52 C23C16/505 C23C16/4486

    Abstract: Provided is a flow rate control method, including: supplying fluid from a valve to a first sensor; measuring, by the first sensor, a first temperature of the fluid, and heating the fluid; measuring, by a second sensor, a second temperature of the heated fluid, and determining, by a controller, a first flow rate of the fluid based on comparison between the first temperature and the second temperature; supplying the fluid to a chamber and supplying an ignition voltage to the chamber through a radio frequency (RF) power source; measuring, by a third sensor, the ignition voltage; comparing, by the controller, the ignition voltage and a reference voltage to determine a second flow rate of the fluid; and controlling a supply of the fluid from the valve based on at least one of the first flow rate and or the second flow rate.

    APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE
    5.
    发明申请
    APPARATUS FOR AND METHOD OF PROCESSING SUBSTRATE 有权
    装置和处理基板的方法

    公开(公告)号:US20150325490A1

    公开(公告)日:2015-11-12

    申请号:US14709775

    申请日:2015-05-12

    Abstract: Provided are an apparatus for and a method of processing a substrate. The substrate processing apparatus includes a substrate processing unit to process a substrate using a processing solution containing a mixture of first and second sources; a source supplying part to supply the first and second sources to the substrate processing unit; at least one analyzer to measure a concentration of the second source in the processing solution or a pH value of the processing solution and adjust a measurement reference value of the second source in the processing solution using a standard solution, in which the first and second sources are mixed to have a predetermined concentration or pH value; and a standard solution supplying part to prepare the standard solution using the first and second sources to be supplied from the source supplying part and to supply the standard solution to the at least one analyzer.

    Abstract translation: 提供了一种处理衬底的装置和方法。 基板处理装置包括:基板处理单元,其使用包含第一和第二源的混合物的处理溶液来处理基板; 源提供部件,用于将第一和第二源提供给基板处理单元; 至少一个分析器,用于测量处理溶液中第二源的浓度或处理溶液的pH值,并使用标准溶液调整处理溶液中第二源的测量参考值,其中第一和第二源 混合以具有预定浓度或pH值; 以及标准溶液供​​应部分,以使用从源供应部分供应的第一和第二源来准备标准溶液,并将标准溶液提供给至少一个分析器。

    ELECTRONIC DEVICE AND OPERATION METHOD OF ELECTRONIC DEVICE CONTROLLING EXTERNAL DEVICE

    公开(公告)号:US20230171124A1

    公开(公告)日:2023-06-01

    申请号:US18098980

    申请日:2023-01-19

    CPC classification number: H04L12/282 G05B15/02 G05B2219/2642

    Abstract: An electronic device may include a communication module communicating with at least one of a first external electronic device and a second external electronic device, wherein the first external electronic device may perform a first operation, a database storing information related to at least one associated device and at least one associated operation for controlling the at least one associated device with a specified command in response to a specified operation of the first external electronic device, wherein the at least one associated device may include the second external electronic device and wherein the at least one associated operation may include a second operation, and at least one processor, wherein the at least one processor may identify that a first operation of the first external electronic device is executed, identify, from the database, a second external electronic device that is an associated device corresponding to the first operation of the first external electronic device and a second operation that is an associated operation in response to identifying that the first external electronic device is located in a specified space and satisfies an associated operation execution condition, and transmit a command for executing the second operation to the second external electronic device through the communication module.

    METHOD OF FORMING CONTACT INCLUDED IN SEMICONDUCTOR DEVICE

    公开(公告)号:US20220415902A1

    公开(公告)日:2022-12-29

    申请号:US17568117

    申请日:2022-01-04

    Abstract: A contact forming method may include providing a semiconductor substrate including a silicon oxide film to an interior of a chamber, subjecting a surface of the silicon oxide film to plasma nitrification treatment, supplying a source gas including TiCl4 and H2 onto the silicon oxide film subjected to the plasma nitrification treatment, and forming a barrier layer by igniting a plasma using the source gas.

    ELECTRONIC DEVICE AND STRESS MEASUREMENT METHOD THEREOF

    公开(公告)号:US20200205724A1

    公开(公告)日:2020-07-02

    申请号:US16640926

    申请日:2018-06-21

    Abstract: Various embodiments of the present invention relate to an electronic device and a stress measurement method thereof. The electronic device comprises: a memory for storing a first histogram for determining reference information for computing health condition of a user; a biometric sensor; and at least one processor functionally connected to the memory and the biometric sensor, wherein the at least one processor may be configured to acquire biometric information via the biometric sensor, generate a second histogram by analyzing the acquired biometric information, accumulate the second histogram in the first histogram, thereby updating the first histogram, and update the reference information on the basis of the updated first histogram. Other various embodiments are possible.

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