公开(公告)号：US20230247825A1

公开(公告)日：2023-08-03

申请号：US17970799

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonok Jung ,  Donghwa Shin ,  Hoin Ryu ,  Youngseung Cho

IPC: H01L27/108

CPC classification number: H01L27/10897 ,  H01L27/10814

Abstract: A semiconductor device may include a substrate extending in a first direction and a second direction perpendicular to the first direction, the substrate including a memory cell region, a peripheral circuit region, and a boundary region between the memory cell region and the peripheral circuit region, first active patterns in the memory cell region, each of the first active patterns extending in a third direction oblique to the first direction, and a silicon dam structure in the boundary region. The silicon dam structure may include a silicon dam pattern including trench lines extending in the oblique direction and a dam isolation pattern in the trench lines.