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    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150200259A1

    公开(公告)日：2015-07-16

    申请号：US14474336

    申请日：2014-09-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-Heun Lim ,  Myung-Jung Pyo ,  Kyung-Hyun Kim ,  Dong-Sik Kim ,  Hyo-Jung Kim

    IPC: H01L29/36 ,  H01L27/115 ,  H01L21/225 ,  H01L29/792

    CPC classification number: H01L29/36 ,  H01L21/2253 ,  H01L21/26513 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7926

    Abstract: A method of manufacturing a vertical-cell-type semiconductor device may include stacking alternately first insulating layers and second insulating layers on a substrate, forming a channel hole through the first and second insulating layers, and forming dielectric layers. A channel layer and a gap fill pattern may be formed within the channel hole. The channel layer may cover a top surface of an uppermost first insulating layer. The top surface of the gap fill pattern is at the same level with the top surface of the channel layer. A first conductivity type impurities may be implanted into the channel layer to form a channel impurity region. A top surface of the gap fill pattern may be recessed. A contact pad on the recessed surface of the gap fill pattern may be formed. A ground selection gate electrode, cell gate electrodes, and string selection gate electrodes may be formed in interlayer spaces that be formed by removing the second insulating layers. String selection gate electrodes may formed in the channel impurity region.

    Abstract translation: 制造垂直单元型半导体器件的方法可以包括在衬底上交替地堆叠第一绝缘层和第二绝缘层，形成通过第一和第二绝缘层的沟道孔，并形成电介质层。 可以在通道孔内形成通道层和间隙填充图案。 沟道层可以覆盖最上面的第一绝缘层的顶表面。 间隙填充图案的顶表面与通道层的顶表面处于同一水平。 可以将第一导电类型的杂质注入到沟道层中以形成沟道杂质区。 间隙填充图案的顶表面可以凹入。 可以形成间隙填充图案的凹陷表面上的接触垫。 可以在通过去除第二绝缘层形成的层间空间中形成接地选择栅电极，单元栅电极和串选择栅电极。 串选择栅电极可以形成在沟道杂质区中。

    SCHEME FOR TRANSMITTING REFERENCE SIGNAL IN WIRELESS COMMUNICATION SYSTEM
    4.
    发明申请
    SCHEME FOR TRANSMITTING REFERENCE SIGNAL IN WIRELESS COMMUNICATION SYSTEM 审中-公开
    无线通信系统发送参考信号的方案

    公开(公告)号：US20150341942A1

    公开(公告)日：2015-11-26

    申请号：US14721579

    申请日：2015-05-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heun-Chul LEE ,  Dong-Sik Kim ,  Hyo-Jin Lee ,  Jong-Han Lim

    IPC: H04W72/08 ,  H04L5/00 ,  H04W72/04 ,  H04W24/08

    CPC classification number: H04W72/082 ,  H04B7/0619 ,  H04B7/0623 ,  H04B7/0626 ,  H04B7/0632 ,  H04B7/0639 ,  H04B7/0667 ,  H04B7/0669 ,  H04B7/0671 ,  H04B7/068 ,  H04B7/0684 ,  H04B7/0689 ,  H04L1/0026 ,  H04L1/06 ,  H04L5/0048 ,  H04L25/02 ,  H04W24/08 ,  H04W72/042

    Abstract: Methods, systems, apparatuses, evolved NodeB (EnBs), User Equipment (UE), and chip sets for all of the same, in cellular communication systems are described. One method for a UE includes receiving a Channel State Information Reference Signal (CSI-RS) transmitted by an eNB according to a pattern in a time-frequency resource grid determined based on the transmission scheme of the eNB, measuring the state of the transmission channel using the CSI-RS, generating channel state information based on the measuring, and transmitting the channel state information as feedback. The UE receives a downlink signal including data and a Cell-specific Reference Signal (CRS) from the eNB and estimates the transmission channel using the CRS and then acquires the data using the estimated channel.

    Abstract translation: 描述了在蜂窝通信系统中的方法，系统，设备，演进节点（EnB），用户设备（UE）以及用于所有相同的芯片组。 一种UE的方法包括：根据基于eNB的传输方案确定的时间 - 频率资源网格中的模式，接收eNB发送的信道状态信息参考信号（CSI-RS），测量传输信道的状态 使用CSI-RS，基于测量产生信道状态信息，并将信道状态信息作为反馈传输。 UE从eNB接收包括数据和小区特定参考信号（CRS）的下行链路信号，并使用CRS估计传输信道，然后使用估计的信道获取数据。

    Method and apparatus for measuring channel quality in multiple input multiple output system
    5.
    发明授权
    Method and apparatus for measuring channel quality in multiple input multiple output system 有权

    公开(公告)号：US09755709B2

    公开(公告)日：2017-09-05

    申请号：US14733414

    申请日：2015-06-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Sik Kim ,  Soo-Bok Yeo

    IPC: H04B7/04 ,  H04B7/0413 ,  H04L25/02 ,  H04B17/336 ,  H04B7/06

    CPC classification number: H04B7/0413 ,  H04B7/0632 ,  H04B17/336 ,  H04L25/0202

    Abstract: A method and an apparatus for measuring channel quality in a MIMO system is provided. The method includes measuring a first SINR based on an assumption that a first detector is used, using a channel estimation value of a reception signal with respect to each of a plurality of space layers, and a second SINR for each of the plurality of space layers corresponding to a case where the plurality of space layers exist independently using the channel estimation value of the reception signal; determining a Log Likelihood Ratio of reception data based on an assumption that a second detector is used, with respect to each of the plurality of space layers; and generating channel quality information based on an assumption that the second detector is used, based on the first SINR and the second SINR with respect to each of the plurality of space layers, and the LLR.

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