公开(公告)号：US20160077517A1

公开(公告)日：2016-03-17

申请号：US14710872

申请日：2015-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Joo LEE ,  Won-Joo PARK ,  Seuk-Hwan CHOI ,  Byung-Gook KIM ,  Dong-Hoon CHUNG

IPC: G05B19/4097 ,  G06T7/00

CPC classification number: G06T7/0004 ,  G05B2219/45027 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

Abstract translation: 一种用于测量掩模图案的临界尺寸的方法，包括使用包括至少一个块的光学邻近校正（OPC）掩模设计来生成掩模图案; 在掩模图案中测量包括具有相同临界尺寸（CD）的相邻块的感兴趣目标区域（目标 - ROI）的第一临界尺度; 确定包括所述目标ROI的关注组群以及与所述目标ROI相邻的至少一个相邻块; 测量感兴趣的组区域的相邻块的第二CD; 以及使用所述第二CD的测量值来校正所述第一CD的测量值。

公开(公告)号：US20170061596A1

公开(公告)日：2017-03-02

申请号：US15160540

申请日：2016-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hak-Seung HAN ,  Dong-Gun LEE ,  Dong-Hoon CHUNG

IPC: G06T7/00 ,  H01L21/67 ,  G03F7/20

CPC classification number: G03F7/70783 ,  G03F1/84

Abstract: An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.

Abstract translation: 提供了一种用于测量掩模误差的装置和用于测量掩模误差的方法。 用于测量掩模误差的装置包括被配置为容纳具有参考图案的参考掩模和与参考掩模相邻的目标掩模的级，使得目标掩模的掩模图案面向参考图案，被配置为照射 第一光束到参考掩模和目标掩模上，光接收单元包括图像传感器，并且图像传感器被配置为接收包括从参考图案生成的第一图像和从掩模图案生成的第二图像的合成图像， 并从第一图像和第二图像生成第三图像，以及测量单元，被配置为从第三图像测量掩模图案的误差。