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公开(公告)号:US10707071B2
公开(公告)日:2020-07-07
申请号:US15826916
申请日:2017-11-30
Applicant: Samsung Electronics Co., Ltd
Inventor: Won-Ho Jang , Hyun-Jung Lee , Se-Jin Park , Yong-Sun Ko , Dong-Gyun Han , Woo-Gwan Shim , Jeong-Yong Bae , Woo-Young Kim , Boong Kim
Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.
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公开(公告)号:US10668403B2
公开(公告)日:2020-06-02
申请号:US15482549
申请日:2017-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung-Min Oh , Ji-Hoon Jeong , Dong-Gyun Han , Kun-Tack Lee , Hyo-San Lee , Yong-Myung Jun
Abstract: A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.
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公开(公告)号:US11361960B2
公开(公告)日:2022-06-14
申请号:US16892478
申请日:2020-06-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Won-Ho Jang , Jeong-Yong Bae , Woo-Young Kim , Hyun-Jung Lee , Se-Jin Park , Yong-Sun Ko , Dong-Gyun Han , Woo-Gwan Shim , Boong Kim
Abstract: A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.
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