公开(公告)号：US20160064609A1

公开(公告)日：2016-03-03

申请号：US14838635

申请日：2015-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Goo CHA ,  Jin Bock LEE ,  Dong Kuk LEE ,  Dong Hyun CHO ,  Min Wook CHOI

IPC: H01L33/24 ,  H01L33/06 ,  H01L33/54 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

Abstract translation: 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。

公开(公告)号：US20140230992A1

公开(公告)日：2014-08-21

申请号：US14262092

申请日：2014-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Il KIM ,  Bae Kyun KIM ,  Dong Hyun CHO ,  Kyoung Soon PARK ,  In Hyung LEE

IPC: H01L33/50

CPC classification number: H01L33/502 ,  C09K11/02 ,  C09K11/565 ,  C09K11/62 ,  C09K11/64 ,  C09K11/70 ,  C09K11/7492 ,  C09K11/883 ,  C09K11/892 ,  H01L33/486 ,  H01L33/50 ,  H01L2924/0002 ,  H01S5/005 ,  H01L2924/00

Abstract: There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part.

Abstract translation: 提供了一种量子点波长转换器，其包括光学稳定的量子点，其发射波长没有任何变化并且具有改善的发射能力。 量子点波长转换器包括：包括量子点波长转换激发光并产生波长转换光的波长转换部分和分散量子点的分散介质; 以及密封波长转换部分的密封件。

公开(公告)号：US20130230938A1

公开(公告)日：2013-09-05

申请号：US13854442

申请日：2013-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won KANG ,  Yong Chun KIM ,  Dong Hyun CHO ,  Jeong Tak OH ,  Dong Joon KIM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32

Abstract: The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer.

公开(公告)号：US20160079478A1

公开(公告)日：2016-03-17

申请号：US14696239

申请日：2015-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Hyun KONG ,  Young Min PARK ,  Dong Hyun CHO

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/58 ,  H01L33/40 ,  H01L33/06 ,  H01L33/42

CPC classification number: H01L33/385 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62

Abstract: A semiconductor light emitting device package may include: a package body having first and second electrode structures; and a light emitting diode chip mounted on the second electrode structure of the package body, the light emitting diode chip including: a support substrate, a light emitting structure including a second conductivity type semiconductor layer, an active layer and a first conductivity type semiconductor layer sequentially stacked on the support substrate, a transparent electrode layer disposed on the first conductivity type semiconductor layer, and an insulating layer disposed on at least a side surface of the light emitting structure. The transparent electrode layer and the first electrode structure may be connected to each other by a side electrode disposed on a side surface of the light emitting diode chip.

Abstract translation: 半导体发光器件封装可以包括：具有第一和第二电极结构的封装体; 以及安装在所述封装体的第二电极结构上的发光二极管芯片，所述发光二极管芯片包括：支撑基板，包括第二导电类型半导体层，有源层和第一导电类型半导体层的发光结构 依次堆叠在支撑基板上，设置在第一导电类型半导体层上的透明电极层和设置在发光结构的至少侧面上的绝缘层。 透明电极层和第一电极结构可以通过设置在发光二极管芯片的侧表面上的侧电极彼此连接。

公开(公告)号：US20140127848A1

公开(公告)日：2014-05-08

申请号：US14152980

申请日：2014-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Hyun CHO ,  Masayoshi KOIKE ,  Yuji IMAI ,  Min Ho KIM ,  Bang Won OH ,  Hun Joo HAHM

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647

Abstract: Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.

Abstract translation: 提供一种氮化物半导体发光器件，其包括由AlN制成的多晶或非晶衬底; 形成在所述AlN基板上并具有条纹或格子结构的多个电介质图案; 通过横向外延生长形成在具有电介质图案的AlN衬底上的侧向外延氮化半导体层; 形成在所述氮化物半导体层上的第一导电氮化物半导体层; 形成在所述第一导电氮化物半导体层上的有源层; 以及形成在所述有源层上的第二导电氮化物半导体层; 及其制造方法。