公开(公告)号：US20250132203A1

公开(公告)日：2025-04-24

申请号：US18758118

申请日：2024-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Song Yi BAEK ,  Geumbi MUN ,  Junga LEE ,  Okran KIM ,  Seyoung HWANG ,  Kyoungchul SHIN ,  Sungsoo YANG ,  Daekwang WOO

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/3213

Abstract: A method for manufacturing a semiconductor device. The method may include forming an insulating interlayer on a substrate, forming tungsten patterns inside and on the insulating interlayer, forming an insulation pattern on the insulating interlayer to fill a space between the tungsten patterns, and the insulation pattern having a lowest point of an upper surface lower than an upper surface of each of the tungsten patterns, forming a preliminary tungsten oxide layer on the upper surface of each of the tungsten patterns, performing a first surface plasma treatment on the preliminary tungsten oxide layer to remove at least a portion of the preliminary tungsten oxide layer to form a tungsten oxide layer and a protective layer on the tungsten oxide layer, and forming an etch stop layer on the protective layer and the insulation pattern.