公开(公告)号：US11728167B2

公开(公告)日：2023-08-15

申请号：US17680996

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjun Lee ,  Keunnam Kim ,  Daehyoun Kim ,  Taejin Park ,  Sunghee Han

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816

Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.

公开(公告)号：US20220293420A1

公开(公告)日：2022-09-15

申请号：US17680996

申请日：2022-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjun Lee ,  Keunnam Kim ,  Daehyoun Kim ,  Taejin Park ,  Sunghee Han

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.

公开(公告)号：US11270885B2

公开(公告)日：2022-03-08

申请号：US16776948

申请日：2020-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongjun Lee ,  Keunnam Kim ,  Daehyoun Kim ,  Taejin Park ,  Sunghee Han

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

Abstract: A hardmask structure including a plurality of hardmask layers is formed on a target layer in a first area and a second area, a first photoresist pattern in the first area and a second photoresist pattern in the second area are formed, a reversible hardmask pattern including a plurality of openings is formed by transferring shapes of the first and second photoresist patterns to a reversible hardmask layer that is one of the plurality of hardmask layers, a gap-fill hardmask pattern is formed by filling some of the plurality of openings formed in the first area with a gap-fill hardmask pattern material, and a feature pattern is formed in the target layer by transferring a shape of the gap-fill hardmask pattern to the target layer in the first area and a shape of the reversible hardmask pattern to the target layer in the second area.