公开(公告)号：US20250142811A1

公开(公告)日：2025-05-01

申请号：US18890123

申请日：2024-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin PARK ,  Jinbum KIM ,  Sung-Hwan JANG ,  Dae-Jin NAM ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor memory device may include bit lines spaced apart from each other in a first direction on a substrate and extending in a second direction, a first active pattern and a second active pattern on the bit lines and are spaced apart from each other in the second direction, and first and second word lines between the first active and second active patterns. The first and second word lines respectively may be adjacent to the first and second active patterns. The first active pattern and/or the second active pattern may include a body portion extending in a third direction and a protruding portion protruding from an upper end of the body portion in the third direction. The protruding portion may have a width in the second direction that is greater than that of the body portion. The third direction may differ from the first and second directions.