公开(公告)号：US20180130806A1

公开(公告)日：2018-05-10

申请号：US15642394

申请日：2017-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： In Cheol NAM ,  Sung Hee HAN ,  Dae Sun KIM

IPC: H01L27/108 ,  H01L21/765 ,  H01L29/49 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/10826 ,  H01L21/765 ,  H01L27/10823 ,  H01L27/10876 ,  H01L27/10879 ,  H01L27/10897 ,  H01L29/0646 ,  H01L29/4925 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.