公开(公告)号：US20230084528A1

公开(公告)日：2023-03-16

申请号：US17831277

申请日：2022-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chunghee KIM ,  Minsu KIM

IPC: H01L27/02

Abstract: A semiconductor device including first and second standard cells disposed in one of a first direction and a second direction intersecting the first direction, the first and second directions parallel to a substrate, and each of the first and second standard cells including a gate structure and an active region, and a filler cell adjacent to the first standard cell in the second direction and adjacent to the second standard cell in the first direction, wherein an output node of the first standard cell is connected to an input node of the second standard cell, an output active contact providing an output node of the first standard cell is connected to a wiring active contact among at least one dummy active contact included in the filler cell, and an input wiring providing an input node of the second standard cell is connected to the wiring active contact may be provided.

公开(公告)号：US20220334182A1

公开(公告)日：2022-10-20

申请号：US17551974

申请日：2021-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chunghee KIM ,  Ahreum KIM ,  Minsu KIM ,  Seungman LIM

IPC: G01R31/3185

Abstract: A multi-bit flip-flop includes a first flip-flop having a first output driver connected to a first output pin and arranged on a first row, a second flip-flop including a second output driver electrically connected to a second output pin and arranged on a second row, and an internal hold buffer connected to the first output driver on the first row and the second flip-flop on the second row.