公开(公告)号：US20230128492A1

公开(公告)日：2023-04-27

申请号：US18049732

申请日：2022-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongkeun CHO ,  Hee Young Park ,  Jin Hyung Park ,  Kun Tack Lee ,  Jung Hyuk Jang ,  Chun Hyung Chung

IPC: H01L27/108

Abstract: There is provided a semiconductor memory device capable of improving the performance and/or the reliability of a device. The semiconductor memory device includes a substrate having a cell area and a peripheral area defined along a periphery of the cell area, wherein the cell area includes an active area defined by a cell element separation film, a cell area separation film in the substrate and defining the cell area, and a plurality of storage contacts connected to the active area, and arranged along a first direction. The plurality of storage contacts includes a first storage contact, a second storage contact, and a third storage contact, wherein the second storage contact is between the first storage contact and the third storage contact, each of the first storage contact and the third storage contact contains or surrounds or defines an airgap, and the second storage contact is free of an airgap.