公开(公告)号：US20220344272A1

公开(公告)日：2022-10-27

申请号：US17644716

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanmin Jo ,  Taeyoon Kim ,  Seungki Nam ,  Sungwook Moon

IPC: H01L23/538 ,  H01L25/18 ,  H01L25/065 ,  H01L21/48

Abstract: A semiconductor device includes pads of a first group and a plurality of first peripheral pads, which are adjacent to each other and spaced apart by a first horizontal gap in a first direction, and pads of a first group and a plurality of first peripheral pads, which are connected to each other and spaced apart by a first vertical gap, greater than the first horizontal gap, in a second direction. A plurality of first wiring patterns include first horizontal extension portions extending at an angle exceeding about 45 degrees with respect to the first direction within the first horizontal gap.

公开(公告)号：US12057404B2

公开(公告)日：2024-08-06

申请号：US17644716

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanmin Jo ,  Taeyoon Kim ,  Seungki Nam ,  Sungwook Moon

IPC: H01L23/48 ,  H01L21/48 ,  H01L23/538 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L23/367 ,  H01L23/498

CPC classification number: H01L23/5386 ,  H01L21/486 ,  H01L25/0652 ,  H01L25/18 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/5384 ,  H01L24/16 ,  H01L2224/16227

Abstract: A semiconductor device includes pads of a first group and a plurality of first peripheral pads, which are adjacent to each other and spaced apart by a first horizontal gap in a first direction, and pads of a first group and a plurality of first peripheral pads, which are connected to each other and spaced apart by a first vertical gap, greater than the first horizontal gap, in a second direction. A plurality of first wiring patterns include first horizontal extension portions extending at an angle exceeding about 45 degrees with respect to the first direction within the first horizontal gap.