公开(公告)号：US20230361037A1

公开(公告)日：2023-11-09

申请号：US18304560

申请日：2023-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byung Ju Kang ,  Pan Jae Park ,  Ji Wook Kwon ,  Chul Hong Park ,  Jae Seok Yang

IPC: H01L23/528 ,  H01L27/092 ,  H01L23/48 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  G06F30/31

CPC classification number: H01L23/5286 ,  H01L27/092 ,  H01L23/481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  G06F30/31

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first side and a second side that are opposite to each other, a power tap cell in a first row, a second row adjacent to the first row, and a third row adjacent to the second row, on the first side of the substrate, a first power rail and a second power rail on the power tap cell, that extend in a first direction and are spaced apart from each other in a second direction, and a power delivery network on the second side of the substrate. The power tap cell includes a first power through via that penetrates the substrate and extends from the power delivery network to the first power rail, and a second power through via that penetrates the substrate and extends from the power delivery network to the second power rail.