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公开(公告)号：US11630724B2
公开(公告)日：2023-04-18
申请号：US17318643
申请日：2021-05-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Beom-kyu Shin , Sung-kyu Park
Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.
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公开(公告)号：US11036577B2
公开(公告)日：2021-06-15
申请号：US16407881
申请日：2019-05-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Beom-kyu Shin , Sung-kyu Park
Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.
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