公开(公告)号：US20200219934A1

公开(公告)日：2020-07-09

申请号：US16561675

申请日：2019-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYEONGJU BAE ,  Duckhee Lee

IPC: H01L27/24 ,  H01L23/528 ,  H01L45/00

Abstract: Disclosed are variable resistance memory devices and methods of fabricating the same. The variable resistance memory device may include: a plurality of memory cells, each comprising a variable resistance pattern and a switching pattern; a plurality of conductive lines to which the memory cell is connected; a bottom electrode connecting at least one of the conductive lines to the variable resistance pattern; and a spacer pattern formed on the bottom electrode to be in contact with the variable resistance pattern. The spacer pattern includes a dielectric material doped with an impurity.