公开(公告)号：US20130043567A1

公开(公告)日：2013-02-21

申请号：US13658132

申请日：2012-10-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junhee CHOI ,  Andrei ZOULKARNEEV

IPC: H01L29/06

CPC classification number: H01L21/02573 ,  C23C16/24 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon.

Abstract translation: 可以使用包括基板的微加热器和与基板间隔开的金属图案来进行形成硅膜的方法。 可以通过向微加热器的金属图案施加电压来加热金属图案并且通过将微加热器暴露于含硅的源气体来形成硅膜。 硅膜可以由多晶硅制成。 用于形成pn结的方法可以使用包括衬底的微加热器，衬底上的导电层和与衬底间隔开的金属图案来执行。 通过向微加热器的金属图案施加电压以加热金属图案，可以在金属图案和导电层之间形成pn结。 pn结可以由多晶硅制成。