Organic light emitting diode
    1.
    发明授权

    公开(公告)号:US11211575B2

    公开(公告)日:2021-12-28

    申请号:US16880878

    申请日:2020-05-21

    Abstract: An organic light emitting diode, including a first electrode; a second electrode facing the first electrode, the second electrode including magnesium; an emission layer between the first electrode and the second electrode; and an electron injection layer between the second electrode and the emission layer, the electron injection layer including a dipole material including a first component and a second component having different polarities, the dipole material including halide, and a content of the magnesium included in the second electrode being in a range of from 10 to 40 volume %.

    Organic light emitting diode display

    公开(公告)号:US10361400B2

    公开(公告)日:2019-07-23

    申请号:US15087808

    申请日:2016-03-31

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Organic light emitting diode display

    公开(公告)号:US11264591B2

    公开(公告)日:2022-03-01

    申请号:US16417386

    申请日:2019-05-20

    Abstract: A light emitting diode display includes: a substrate; a light emitting element on the substrate; and a capping layer on the organic light emitting element and including a plurality of refractive layers each including a low refraction layer and a high refraction layer, wherein the high refraction layer includes a first inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the low refraction layer includes a second inorganic material having a refractive index which is equal to or greater than about 1.0 and equal to or less than about 1.7, and wherein the second inorganic material comprises at least one selected from LiF, AlF3, NaF, KF, RbF, CaF2, SrF2, and YbF2.

    Organic light emitting diode display

    公开(公告)号:US11177461B2

    公开(公告)日:2021-11-16

    申请号:US16427978

    申请日:2019-05-31

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Organic light emitting diode
    8.
    发明授权

    公开(公告)号:US10749129B2

    公开(公告)日:2020-08-18

    申请号:US15352513

    申请日:2016-11-15

    Abstract: According to an embodiment of the present disclosure, an organic light emitting diode includes: a first electrode; a second electrode overlapping the first electrode; an emission layer positioned between the first electrode and the second electrode; an electron injection layer positioned between the emission layer and the second electrode; and an electron injection delay layer positioned between the emission layer and the electron injection layer, wherein the electron injection layer includes a first material made of a metal and a second material made of a metal halide, and the electron injection delay layer has a thickness of about 20 Å to about 140 Å.

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