-
公开(公告)号:US09443881B2
公开(公告)日:2016-09-13
申请号:US14518278
申请日:2014-10-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jean-Ho Song , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC: H01L29/04 , H01L27/12 , H01L29/423 , H01L29/45 , H01L29/786
CPC classification number: H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract translation: 薄膜晶体管阵列面板包括栅极线,覆盖栅极线的栅极绝缘层,设置在栅极绝缘层上的半导体层,设置在半导体层上的数据线和漏极,钝化层 覆盖数据线和漏电极,并且具有露出漏电极的一部分的接触孔,以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层,下层比上层宽,下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
-
公开(公告)号:US20150053984A1
公开(公告)日:2015-02-26
申请号:US14518278
申请日:2014-10-20
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: JEAN-HO SONG , Shin-Il Choi , Sun-Young Hong , Shi-Yul Kim , Ki-Yeup Lee , Jae-Hyoung Youn , Sung-Ryul Kim , O-Sung Seo , Yang-Ho Bae , Jong-Hyun Choung , Dong-Ju Yang , Bong-Kyun Kim , Hwa-Yeul Oh , Pil-Soon Hong , Byeong-Beom Kim , Je-Hyeong Park , Yu-Gwang Jeong , Jong-In Kim , Nam-Seok Suh
IPC: H01L27/12 , H01L29/45 , H01L29/423 , H01L29/786
CPC classification number: H01L27/124 , H01L27/12 , H01L27/1214 , H01L27/1288 , H01L29/42368 , H01L29/458 , H01L29/78669
Abstract: A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.
Abstract translation: 薄膜晶体管阵列面板包括栅极线,覆盖栅极线的栅极绝缘层,设置在栅极绝缘层上的半导体层,设置在半导体层上的数据线和漏极,钝化层 覆盖数据线和漏电极,并且具有露出漏电极的一部分的接触孔,以及通过接触孔与漏电极电连接的像素电极。 数据线和漏极各自具有包括钛的下层和铜的上层的双层,下层比上层宽,下层具有暴露的区域。 栅极绝缘层可以具有台阶形状。
-
公开(公告)号:US08759834B2
公开(公告)日:2014-06-24
申请号:US13947459
申请日:2013-07-22
Applicant: Samsung Display Co., Ltd.
Inventor: Joo-Ae Youn , Yang-Ho Bae , Chang-Oh Jeong , Chong-Chul Chai , Pil-Sang Yun , Hong Long Ning , Byeong-Beom Kim
IPC: H01L21/33
CPC classification number: H01L33/0041 , H01L27/124 , H01L29/458
Abstract: A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
Abstract translation: 显示面板包括: 下栅极线,基本上垂直于下栅极线设置的下数据线,连接到下栅极线和下数据线的薄膜晶体管(“TFT”),设置在下栅极线上的绝缘层, 下数据线和TFT,并且具有暴露下栅极线和下数据线的多个沟槽,设置在下栅极线上的沟槽中的上栅极线,设置在下数据上的沟槽中的上数据线 线和与TFT连接的像素电极。
-
-