LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20230038628A1

    公开(公告)日:2023-02-09

    申请号:US17805619

    申请日:2022-06-06

    Abstract: A light emitting device includes: a first electrode; a second electrode overlapping the first electrode; m light emitting units between the first electrode and the second electrode; and m-1 charge generating layers between adjacent light emitting units, wherein the charge generating layer includes: an n-type charge generating layer and a p-type charge generating layer; at least one of a plurality of n-type charge generating layers includes a dopant including an alkali metal, and at least one of a plurality of n-type charge generating layers includes a dopant including a lanthanum metal; contents of the alkali metal and the lanthanum metal doped in the n-type charge generating layer are different from each other; and the m is a natural number of greater than or equal to 3.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    2.
    发明申请

    公开(公告)号:US20190305254A1

    公开(公告)日:2019-10-03

    申请号:US16427978

    申请日:2019-05-31

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    3.
    发明申请

    公开(公告)号:US20190273220A1

    公开(公告)日:2019-09-05

    申请号:US16417386

    申请日:2019-05-20

    Abstract: An organic light emitting diode display includes: a substrate; an organic light emitting element on the substrate; and a capping layer on the organic light emitting element and including a high refraction layer formed of an inorganic material having a refractive index which is equal to or greater than about 1.7 and equal to or less than about 6.0, wherein the inorganic material includes at least one selected from CuI, thallium iodide (TlI), AgI, CdI2, HgI2, SnI2, PbI2, BiIa, ZnI2, MnI2, FeI2, CoI2, NiI2, aluminium iodide (AlI3), thorium(IV) iodide (ThI4), uranium triiodide (UI3), MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, CuO, Cu2O, WO3, MoO3, SnO2, Nb2O5, Ag2O, CdO, CoO, Pr2O3, Bi2O3, Fe2O3, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    ORGANIC LIGHT EMITTING DIODE DISPLAY
    7.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY 审中-公开
    有机发光二极管显示

    公开(公告)号:US20160380235A1

    公开(公告)日:2016-12-29

    申请号:US15087808

    申请日:2016-03-31

    Abstract: An organic light emitting diode display including: a substrate; an organic light emitting diode on the substrate; a capping layer on the organic light emitting diode and including a high refractive layer including an inorganic material having a refractive index that is equal to or greater than about 1.7 and equal to or less than about 6.0; and a thin film encapsulation layer covering the capping layer and the organic light emitting diode, the inorganic material including at least one selected from the group consisting of CuI, thallium iodide (TlI), BaS, Cu2O, CuO, BiI, WO3, TiO2, AgI, CdI2, HgI2, SnI2, PbI2, BiI3, ZnI2, MoO3, Ag2O, CdO, CoO, Pr2O3, SnS, PbS, CdS, CaS, ZnS, ZnTe, PbTe, CdTe, SnSe, PbSe, CdSe, AlAs, GaAs, InAs, GaP, InP, AlP, AlSb, GaSb, and InSb.

    Abstract translation: 一种有机发光二极管显示器,包括:基板; 基板上的有机发光二极管; 在有机发光二极管上的覆盖层,包括折射率等于或大于约1.7且等于或小于约6.0的折射率的无机材料的高折射层; 以及覆盖所述覆盖层和所述有机发光二极管的薄膜封装层,所述无机材料包括选自CuI,碘化铊(TlI),BaS,Cu2O,CuO,BiI,WO3,TiO2, AgI,CdI2,HgI2,SnI2,PbI2,BiI3,ZnI2,MoO3,Ag2O,CdO,CoO,Pr2O3,SnS,PbS,CdS,CaS,ZnS,ZnTe,PbTe,CdTe,SnSe,PbSe,CdSe,AlAs, InAs,GaP,InP,AlP,AlSb,GaSb和InSb。

Patent Agency Ranking